Thermal stability of Si-doped InGaN multiple-quantum wells for high efficiency light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3511712
Reference13 articles.
1. Impurity doping effect on thermal stability of InGaN∕GaN multiple quantum-well structures
2. X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD
3. Investigation of optical and electrical properties of Mg-doped p-InxGa1−xN, p-GaN and p-AlyGa1−yN grown by MOCVD
4. The Blue Laser Diode
5. Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells
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1. Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties;Journal of Alloys and Compounds;2024-05
2. Thermally stable radiative recombination centers within trench structures of red multi-quantum wells;Journal of Physics D: Applied Physics;2024-03-22
3. On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates;physica status solidi (a);2016-06-27
4. Effect of Morphological and Structural Properties on SIMS Depth Profiles of InGaN/GaN Multiple Quantum Wells Grown on Sapphire by MOCVD;Journal of Molecular and Engineering Materials;2015-09
5. Homogeneous in Distribution of InGaN/GaN Quantum Wells in High Performance GaN-Based Light-Emitting Devices;Applied Mechanics and Materials;2014-01
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