Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties-Reference-Cited by-同舟云学术

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Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties

Published:2024-05 Issue: Volume:983 Page:173909
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Chen Zhenyu,Liang Feng,Zhao Degang,Yang Jing,Liu Zongshun

Funder

Chinese Academy of Sciences Youth Innovation Promotion Association

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference40 articles.

1. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode;Yang;J. Semicond.,2022

2. Y. Nakatsu et al., Blue and green InGaN semiconductor lasers as light sources for displays, in: Proceedings of the Gallium Nitride Materials and Devices XV, 2020.

3. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature;Liang;J. Semicond.,2021

4. High-power hybrid GaN-based green laser diodes with ITO cladding layer;Hu;Photonics Res.,2020

5. Emission efficiency dependence on the p-GaN thickness in a high-indium InGaN/GaN quantum-well light-emitting diode;Liao;IEEE Photonics Technol. Lett.,2011

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