X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy
3. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
4. Solubility of nitrogen in binary III–V systems
5. Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
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1. Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells;SPIE Proceedings;2016-02-26
2. Graphene in ohmic contact for both n-GaN and p-GaN;Applied Physics Letters;2014-05-26
3. Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode;SPIE Proceedings;2013-03-04
4. Phase Behavior of Pseudo-Ternary Gemini Surfactant + 1-Hexanol/Oil/Water Systems;Journal of Atomic, Molecular, and Optical Physics;2012-11-14
5. Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2012-11
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