Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Published:2012-11 Issue: Volume:540 Page:46-48
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zhao D.G.,Jiang D.S.,Le L.C.,Wu L.L.,Li L.,Zhu J.J.,Wang H.,Liu Z.S.,Zhang S.M.,Jia Q.J.,Yang Hui

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference15 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

3. X-ray and cathodoluminescence study on the effect of intentional long time annealing of the InGaN/GaN multiple quantum wells grown by MOCVD

4. Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes

5. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

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