Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2033136
Reference8 articles.
1. Electromigration saturation in a simple interconnect tree
2. Experimental characterization and modeling of the reliability of interconnect trees
3. Grazing-angle Incidence X-ray Diffraction by the Si1-α(x)-β(x)Geβ(x)Cβ(x)/Si Heterojunction where the Germanium and the Carbon Concentrations are Periodically Varying along the Flat Layer Surface
4. Experimental characterization and modeling of the reliability of three-terminal dual-damascene Cu interconnect trees
5. In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures
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1. Electromigration Reliability of Advanced High-Density Fan-Out Packaging With Fine-Pitch 2-/2-μm L/S Cu Redistribution Lines;IEEE Transactions on Components, Packaging and Manufacturing Technology;2020-09
2. Experimenting and modeling of catastrophic failure in electromigration-induced resistance degradation for deep submicron dual-damascene copper interconnects;Solid-State Electronics;2018-10
3. Interconnect reliability modeling and analysis for multi-branch interconnect trees;Proceedings of the 52nd Annual Design Automation Conference;2015-06-07
4. Ultrasonic near-field optical microscopy using a plasmonic nanofocusing probe;Journal of Applied Physics;2013-06-21
5. Comparison of electromigration simulation in test structure and actual circuit;Applied Mathematical Modelling;2012-10
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