Experimenting and modeling of catastrophic failure in electromigration-induced resistance degradation for deep submicron dual-damascene copper interconnects-Reference-Cited by-同舟云学术

Experimenting and modeling of catastrophic failure in electromigration-induced resistance degradation for deep submicron dual-damascene copper interconnects

Published:2018-10 Issue: Volume:148 Page:7-15
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Adhikari Aparna,Roy Arijit^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference49 articles.

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4. Effect of microstructure and anisotropy of copper on reliability in nanoscale interconnects;Basavalingappa;IEEE Trans Device Mater Rel,2017

5. A robust low-k/Cu dual damascene interconnect with sidewall protection layer;Ueki;IEEE Trans Device Mater Rel,2011

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