Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104360
Reference15 articles.
1. Deposition Mechanism of GaAs Epitaxy
2. The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
3. Decomposition of trimethylgallium on the gallium‐rich GaAs (100) surface: Implications for atomic layer epitaxy
4. Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy
5. New approach to the atomic layer epitaxy of GaAs using a fast gas stream
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