Deposition Mechanism of GaAs Epitaxy-Reference-Cited by-同舟云学术

Deposition Mechanism of GaAs Epitaxy

Published:1987-04-01 Issue:4 Volume:134 Page:945-951
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Nishizawa Jun‐ichi¹²³²,Kurabayashi Toru¹²³²,Abe Hitoshi¹²³²,Sakurai Naoki¹²³²

Affiliation:

1. Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan, and Exploratory Research for Advanced Technology, Nishizawa Perfect Crystal Project, Research Development Corporation of Japan, c/o Semiconductor Research Institute, Kawauchi, Sendai 980, Japan

2. Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan

3. Exploratory Research for Advanced Technology, Nishizawa Perfect Crystal Project, Research Development Corporation of Japan, c/o Semiconductor Research Institute, Kawauchi, Sendai 980, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2100600/pdf

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