Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation-Reference-Cited by-同舟云学术

Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

Published:2020-12-28 Issue:26 Volume:117 Page:262108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

De Santi C.¹^ORCID,Fregolent M.¹^ORCID,Buffolo M.¹^ORCID,Wong M. H.²^ORCID,Higashiwaki M.²^ORCID,Meneghesso G.¹^ORCID,Zanoni E.¹^ORCID,Meneghini M.¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131, Italy

2. National Institute of Information and Communications Technology, Tokyo 184-8795, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0029295

Reference25 articles.

1. Recent progress in Ga2O3power devices

2. Guest Editorial: The dawn of gallium oxide microelectronics

3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

4. Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

5. Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

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