Effects of magnetic field on resistive switching in multiferroic based Ag / BiFeO 3 / FTO RRAM device-Reference-Cited by-同舟云学术

Effects of magnetic field on resistive switching in multiferroic based Ag / BiFeO 3 / FTO RRAM device

Published:2020-03-02 Issue:9 Volume:116 Page:092901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jena A. K.¹,Sahoo Ajit Kumar¹,Mohanty J.¹^ORCID

Affiliation:

1. Nanomagnetism and Microscopy Laboratory, Department of Physics Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India

Funder

Council of Scientific and Industrial Research India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142175

Reference23 articles.

1. The missing memristor found

2. Remote control of resistive switching in TiO2 based resistive random access memory device

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4. Multilevel resistive switching with ionic and metallic filaments

5. Reproducible switching effect in thin oxide films for memory applications

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