Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf0.5Zr0.5O2 and Co-Reference-Cited by-同舟云学术

Robust multiferroicity and magnetic modulation of the ferroelectric imprint field in heterostructures comprising epitaxial Hf_0.5Zr_0.5O₂ and Co

Published:2024 Issue:10 Volume:11 Page:2388-2396
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Zakusylo Tetiana¹^ORCID,Quintana Alberto¹,Lenzi Veniero²^ORCID,Silva José P. B.³⁴^ORCID,Marques Luís³⁴,Yano José Luís Ortolá¹,Lyu Jike¹,Sort Jordi⁵⁶^ORCID,Sánchez Florencio¹^ORCID,Fina Ignasi¹^ORCID

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain

2. CICECO – Aveiro Institute of Materials, Department of Chemistry, University of Aveiro, Aveiro 3810-193, Portugal

3. Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, Braga 4710-057, Portugal

4. Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, Braga 4710-057, Portugal

5. Departament de Física, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

6. ICREA, Pg. Lluís Companys 23, Barcelona 08010, Spain

Abstract

Magnetoelectric composite multiferroic comprising ferroelectric doped HfO2 and ferromagnetic cobalt coupled films is demonstrated to be a promising candidate for energy efficient memory computing.

Funder

Generalitat de Catalunya

Ministerio de Ciencia, Innovación y Universidades

H2020 European Research Council

Centro de Investigação em Materiais Cerâmicos e Compósitos

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D3MH01966G

Reference61 articles.

1. The fundamentals and applications of ferroelectric HfO2

2. Binary ferroelectric oxides for future computing paradigms

3. Memory technology—a primer for material scientists

4. Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

5. HfO₂-based ferroelectrics: From enhancing performance, material design, to applications