Remote control of resistive switching in TiO2 based resistive random access memory device
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-17607-4.pdf
Reference27 articles.
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2. Lee, J. S., Lee, S. & Noh, T. W. Resistive switching phenomena: A review of statistical physics approaches. Applied Physics Reviews 2, 031303 (2015).
3. Rozenberg, M. J. et al. Mechanism for bipolar resistive switching in transition-metal oxides. Physical Review B 81, 115101 (2010).
4. Kim, H. D., An, H. M., Lee, E. B. & Kim, T. G. Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices. IEEE Transactions on Electron Devices 58, 3566–3573 (2011).
5. Cho, B., Song, S., Ji, Y., Kim, T. W. & Lee, T. Organic resistive memory devices: performance enhancement, integration, and advanced architectures. Advanced Functional Materials 21, 2806–2829 (2011).
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