Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures-Reference-Cited by-同舟云学术

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Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Published:2011-07-08 Issue:15 Volume:21 Page:2806-2829
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Cho Byungjin,Song Sunghun,Ji Yongsung,Kim Tae-Wook,Lee Takhee

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201100686/fullpdf

Reference139 articles.

1. Ferroelectric thin films: Review of materials, properties, and applications

2. Technology and materials issues in semiconductor-based magnetoelectronics

3. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology

4. Nanoionics-based resistive switching memories

5. Progress and outlook for MRAM technology

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