First GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm on a silicon substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99815
Reference8 articles.
1. AlGaAs/GaAs stripe laser diodes fabricated on Si substrates by MOCVD
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3. Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition
4. cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition
5. cw phase‐locked array Ga0.25In0.75As0.5P0.5‐InP high power semiconductor laser grown by low‐pressure metalorganic chemical vapor deposition
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