A lifetime of contributions to the world of semiconductors using the Czochralski invention
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference122 articles.
1. Ein neues Verfahren zer Messung der Kristallisationsgeschwindigkeit;Czochralski;Z. für Phys. Chem.,1918
2. Very high purity InP epilayer grown by metalorganic chemical vapor deposition;Razeghi;Appl. Phys. Lett.,1988
3. LP-MOCVD growth, characterization, and applications of InP material;Razeghi,1985
4. Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic chemical vapor deposition;Guldner;Appl. Phys. Lett.,1982
5. First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition;Razeghi;J. Appl. Phys.,1986
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