Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate-Reference-Cited by-同舟云学术

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Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

Published:2016-04-04 Issue:14 Volume:108 Page:143101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schulze C. S.¹,Huang X.²,Prohl C.¹,Füllert V.¹,Rybank S.¹,Maddox S. J.³^ORCID,March S. D.³,Bank S. R.³,Lee M. L.²,Lenz A.¹²

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany

2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA

3. Microelectronics Research Center and ECE Department, The University of Texas at Austin, Austin, Texas 78758, USA

Funder

Air Force Office of Scientific Research (AFOSR)

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4945598

Reference29 articles.

1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

2. First GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm on a silicon substrate

3. High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si

4. Recent progress in lasers on silicon

5. Quantum dot lasers for silicon photonics [Invited]

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1. Optimization of the in situ cleavage process for III–V/Si(001) investigations by cross-sectional scanning tunneling microscopy;Journal of Applied Physics;2021-04-21

2. Silicon photonic transceivers for application in data centers;Journal of Semiconductors;2020-10-01

3. Interface of GaP/Si(001) and antiphase boundary facet-type determination;Journal of Applied Physics;2019-01-28

4. Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates;AIP Advances;2018-12

5. Design of a 1.55 µm nanoscale laser array on v-groove patterned Si substrates;Laser Physics Letters;2018-07-31

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