Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95710
Reference3 articles.
1. cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition
2. High‐power fundamental‐transverse‐mode strip buried heterostructure lasers with linear light‐current characteristics
3. A Schottky‐barrier‐delineated stripe structure for a GaInAsP‐InP cw Laser
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1. Low-Pressure MOVPE: The time of the pioneers;Journal of Crystal Growth;2023-01
2. GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition;Journal of Applied Physics;1993-07
3. The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layers;Materials Science and Engineering: B;1991-07
4. Buried‐heterostructure lasers fabricated byinsituprocessing techniques;Applied Physics Letters;1990-10-29
5. Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers;Journal of Electronic Materials;1990-04
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