The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers
2. Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy
3. The use of InP-based semiconductor reflective stacks for enhanced device performance
4. High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers
5. 1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. GRINSCH GaInAsP MQW laser structures grown by MOMBE;Journal of Crystal Growth;1998-06
2. MOCVD of Compound Semiconductor Layers;Handbook of Compound Semiconductors;1995
3. Ultrafast graded‐gap electron transfer optical modulator structure;Applied Physics Letters;1994-08-08
4. A comparison of MOVPE grown strained and unstrained MQW lasers incorporating continuously graded or single composition confinement layers;Journal of Crystal Growth;1992-11
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