Buried‐heterostructure lasers fabricated byinsituprocessing techniques
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104042
Reference11 articles.
1. Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography
2. A focused ion beam vacuum lithography process compatible with gas source molecular beam epitaxy
3. Insitupattern formation and high quality overgrowth by gas source molecular beam epitaxy
4. Role of native oxide layers in the patterning of InP by Ga ion beam writing and ion beam assisted Cl2etching
5. Electron-Beam-Induced Cl2Etching of GaAs
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1. Emission properties of a dual ion/electron point emitter based on In–Bi alloy;Applied Physics Letters;2003-09-15
2. Emission properties of a dual ion/electron source based on Au–In alloy;Applied Physics Letters;2002-02-25
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