Reactive ion etching of silicon carbide in SF6 gas: Detection of CF, CF2, and SiF2 etch products
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1395520
Reference18 articles.
1. Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in CF4/O2mixtures
2. Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System
3. High etch rates of SiC in magnetron enhanced SF6 plasmas
4. Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries
5. Via-hole etching for SiC
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