Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift-Reference-Cited by-同舟云学术

Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift

Published:2005-03 Issue:5 Volume:97 Page:053515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kudrawiec R.,Yuen H. B.,Ryczko K.,Misiewicz J.,Bank S. R.,Wistey M. A.,Bae H. P.,Harris James S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1854729

Reference71 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. 1.3-μm GaInNAs-AlGaAs distributed feedback lasers

3. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 [micro sign]m

4. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

5. Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

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1. Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers;Materials Science in Semiconductor Processing;2013-12

2. Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap;Materials Science-Poland;2013-10

3. Characterizations of GaInNAs/GaAs quantum wells;SPIE Proceedings;2013-07-25

4. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well;Journal of Physics: Condensed Matter;2013-01-10

5. Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 μm: Broadening of the fundamental transition;Applied Physics Letters;2009-01-19