Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference41 articles.
1. Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb∕GaAsN∕GaAs quantum well tailored at 1.5μm: The energy level structure and the Stokes shift
2. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
3. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
4. Low threshold InGaAsN/GaAs lasers beyond 1500nm
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1. Modeling and optimization of Sb and N resonance states effect on the band structure of mismatched III-N-V alloys using artificial neural networks;Materials Science and Engineering: B;2023-04
2. Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range;Materials Science in Semiconductor Processing;2021-04
3. Modeling of a compressively strained quantum well laser based on InxGa1−xSb/GaSb and emitting at 2 μm;Journal of Computational Electronics;2021-01-01
4. Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode;Journal of Semiconductors;2020-06-01
5. Numerical Study of Strained GaAs1−xNx/GaAs Quantum-Well Laser;Transactions on Electrical and Electronic Materials;2019-07-04
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