Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010098?crawler=true&mimetype=application/pdf
Reference11 articles.
1. Submilliamp 1.3 [micro sign]m vertical-cavity surface-emitting lasers with threshold current density of < 500 A/cm2
2. Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers
3. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m
4. Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates
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