Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://iopscience.iop.org/article/10.1088/1361-6528/ab36f3/pdf
Reference44 articles.
1. Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-Pumping
2. Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
3. Absorption Characteristics of ${\rm GaAs}_{1-x}{\rm Bi}_{x}/{\rm GaAs}$ Diodes in the Near-Infrared
4. Giant Spin-Orbit Bowing inGaAs1−xBix
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