Low dark current, planar In0.4Ga0.6Asp‐i‐nphotodiode prepared by molecular beam epitaxy growth on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104882
Reference7 articles.
1. Long‐wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal‐semiconductor‐metal photodetector
2. GaInAsP/InP avalanche photodiodes
3. InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature
4. Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy
5. Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of graded Inx0;Semiconductor Science and Technology;1995-02-01
2. Wide wavelength and low dark current lattice‐mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor‐phase epitaxy;Applied Physics Letters;1994-03-07
3. Material and electrical properties of highly mismatched InxGa1−xAs on GaAs by molecular‐beam epitaxy;Journal of Applied Physics;1993-12
4. High-speed λ=1.3 μm metal–semiconductor–metal photodetectors on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05
5. Inx(AlzGa1-z)1-xAs as buffers for the growth of strain-relaxed InxGa1-xAs epilayers;Semiconductor Science and Technology;1993-03-01
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