Material and electrical properties of highly mismatched InxGa1−xAs on GaAs by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355065
Reference37 articles.
1. InAsp‐ndiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy
2. Low dark current, planar In0.4Ga0.6Asp‐i‐nphotodiode prepared by molecular beam epitaxy growth on GaAs
3. High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates
4. Monolithic integration of InAs photodiode and GaAs MESFET
5. Mobility of strained and dislocated In/sub x/Ga/sub 1-x/As semiconductor material
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