Mobility of strained and dislocated In/sub x/Ga/sub 1-x/As semiconductor material
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/3738/00137306.pdf?arnumber=137306
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of induced quasi-two-dimensional transport in n-type InxGa1−xAs1 − yBiy bulk layer;Applied Physics A;2024-06-26
2. Investigation of electronic transport in InAs/GaAs samples. A study using the metaheuristic self-adaptive differential evolution method;Physica B: Condensed Matter;2021-11
3. Monte Carlo modelling of abrupt InP/InGaAs HBTs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2003-05-06
4. Carrier scattering by dislocations in semiconductors;Journal of Materials Science: Materials in Electronics;2001
5. Discussion;Solid-State Electronics;1998-01
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