Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103559
Reference4 articles.
1. Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE
2. 1.11-1.67 µm
3. 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
4. Growth of InGaAsP by molecular beam epitaxy
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