Growth of InGaAsP by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93405
Reference14 articles.
1. InGaAsP/InP double-heterostructure lasers: Simple expressions for wave confinement, beamwidth, and threshold current over wide ranges in wavelength (1.1-1.65 µm)
2. Performance of In<inf>x</inf>Ga<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf>photodiodes with dark current limited by diffusion, generation recombination, and tunneling
3. Special Issue on Quaternary Compound Semiconductor Materials and Devices—Sources and Detectors, IEEE J. Quantum Electron.QE‐17(1981).IEJQA70018-9197
4. 1.11-1.67 µm
5. Low‐threshold 1.25‐μm vapor‐grown InGaAsP cw lasers
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2. Optoelectronic Materials;Crucial Issues in Semiconductor Materials and Processing Technologies;1992
3. Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy;Applied Physics Letters;1990-09-03
4. Low-Energy Ion/Surface Interactions during Film Growth from the Vapor Phase: Effects on Nucleation and Growth Kinetics, Defect Structure, and Elemental Incorporation Probabilities;Plasma-Surface Interactions and Processing of Materials;1990
5. LOW-ENERGY ION/SURFACE INTERACTIONS DURING FILM GROWTH FROM THE VAPOR PHASE;Ion Beam Assisted Film Growth;1989
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