Inx(AlzGa1-z)1-xAs as buffers for the growth of strain-relaxed InxGa1-xAs epilayers
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=3/a=001/pdf
Reference19 articles.
1. Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures grown on GaAs by step grading
2. Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
3. Metamorphic InyGa1−yAs/InzAl1−zAs heterostructure field effect transistors grown on GaAs(001) substrates using molecular-beam epitaxy
4. Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance
5. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural properties of highly mismatched InGaAs-based devices grown by molecular beam epitaxy on GaAs substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-03
2. Quantum-confined Stark effect modulators at 1.06 mu m on GaAs;IEEE Photonics Technology Letters;1993-12
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