Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures grown on GaAs by step grading-Reference-Cited by-同舟云学术

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Modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures grown on GaAs by step grading

Published:1992-04-01 Issue:4 Volume:7 Page:601-603
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chen Jianhui,Fernandez J M,Chang J C P,Kavanagh K L,Wieder H H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/7/i=4/a=028/pdf

Reference17 articles.

1. In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy

2. Growth and transport properties of InAs epilayers on GaAs

3. A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

4. Photoluminescence of an InAlAs/InGaAs Quantum Well Structure Grown on a GaAs Substrate

5. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates

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1. Equilibrium Lattice Relaxation and Misfit Dislocations in Step-Graded In x Ga1−x As/GaAs (001) and In x Al1−x As/GaAs (001) Metamorphic Buffer Layers;Journal of Electronic Materials;2016-02-18

2. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015

3. Metamorphic QuantumWell Lasers;Lattice Engineering;2012-11-27

4. Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE;Journal of Crystal Growth;2011-05

5. Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers;Applied Physics Letters;2010-08-30

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