Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance-Reference-Cited by-同舟云学术

Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance

Published:1990-04 Issue:7 Volume:67 Page:3323-3327
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chang Kevin,Bhattacharya Pallab,Lai Richard

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345368

Reference22 articles.

1. DC and microwave characteristics of InAlAs/InGaAs single-quantum-well MODFETs with GaAs gate barriers

2. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

3. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures

4. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

5. Stability of strained quantum-well field-effect transistor structures

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3. Structural and Optical Properties of InAlAs Graded Buffers on GaAs (001) for Unipolar Devices;Journal of the Korean Physical Society;2009-02-14

4. Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001);Journal of Crystal Growth;2009-02

5. Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs;Japanese Journal of Applied Physics;2004-04-27