Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341748
Reference9 articles.
1. Characterization of graded interface InxGa1−xAs/In0.52Al0.48As (0.53
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3. Estimation of alloy scattering potential in ternaries from the study of two‐dimensional electron transport
4. Energy levels and alloy scattering in InP‐In (Ga)As heterojunctions
5. Low-Field Phonon-Limited Mobility in Semiconducting Heterojunction Structures
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