Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates
2. W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/
3. InP∕InGaAs SHBTs with 75 nm collector and fT>500 GHz
4. Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance
5. In0.5Ga0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy
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1. Design engineering of non-linear graded InAlAs metamorphic buffer layers for efficient reduction of misfit dislocation density;Journal of Crystal Growth;2024-06
2. Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates;Russian Microelectronics;2023-06
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4. Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile;Semiconductors;2023-03
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