Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818330
Reference26 articles.
1. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2. Review of Current Status of III-V MOSFETs
3. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
4. Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)
5. Mechanism of dangling bond elimination on As-rich InGaAs surface
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