Author:
Thayne Iain,Hill Richard,Holland Martin,Li Xi,Zhou Haiping,Macintyre Douglas,Thoms Stephen,Kalna Karol,Stanley Colin,Asenov Asen,Droopad Ravi,Passlack Matthias
Abstract
To address issues associated with continual scaling of the International Technology Roadmap for Semiconductors (ITRS) (1) to follow Moore's Law, MOSFETs with high mobility channel materials are now being seriously considered. As a result, there has been a significant expansion in research into III-V MOSFETs as a potential n-channel device solution. A wide range of high electron mobility channel materials, device architectures and gate oxides are currently being considered, and in this review, key performance metrics of III-V MOSFETs will be compared.
Publisher
The Electrochemical Society
Cited by
23 articles.
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