Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference32 articles.
1. Lowering the Schottky barrier height by titanium contact for high-drain current in mono-layer MoS2 transistor;Sridevi;J. Electron. Mater.,2021
2. Investigation of quantum confinement effects on molybdenum disulfide (MoS2) based transistor using ritz galerkin finite element technique;Sridevi;Silicon,2021
3. Performance evaluation of sub 5nm GAA NWMBCFET using silicon carbide source/drain material;Kumar;IETE J. Res.,2021
4. Nanometre-scale electronics with III–V compound semiconductors;Del Alamo;Nature,2011
5. Review of current status of III-V MOSFETs;Thayne;ECS Trans,2009
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