Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-01010-w.pdf
Reference28 articles.
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3. Sandeep V, Charles Pravin J, Ramesh Babu A, Prajoon P (2020) Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO2 dielectric using cubic spline interpolation technique. IEEE Trans Electron Devices 67:3558–3563. https://doi.org/10.1109/TED.2020.3010710
4. Charles Pravin J, Nirmal D, Prajoon P, Menokey MA, Anuja M (2016) A new drain current model for a dual metal junctionless transistor for enhanced digital circuit performance. IEEE Trans Electron Devices 63(9):3782–3789. https://doi.org/10.1109/TED.2016.2591982
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