Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9172152/09159895.pdf?arnumber=9159895
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23
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4. Accurate Prediction Model with Experiment Validation for Viscosity Calibration Curve of Turbine Flow Meter Using Cubic Spline Approach;2024
5. Effect of high-k dielectric HfO2 on performance of AlGaN/GaN based MOSHEMT for RF applications;Microsystem Technologies;2023-12-18
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