Analysis of DC Characteristics for Tin Oxide (SnO2) based Thin Film Transistor infused with Nickel Material-Reference-Cited by-同舟云学术

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Analysis of DC Characteristics for Tin Oxide (SnO2) based Thin Film Transistor infused with Nickel Material

Published:2024-03-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 Third International Conference on Intelligent Techniques in Control, Optimization and Signal Processing (INCOS)
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Author:

S Vengidusamy.¹,Kanagavalli R.¹,Priya P.²,Saravanan S.³^ORCID,Kalaiyarasi M.⁴

Affiliation:

1. Sri Vidya College of Engineering and Technology,Department of ECE,Tamil Nadu,India

2. Kalasalingam Academy of Research and Education,Department of EEE,Tamilnadu,India

3. B V Raju Institute of Technology,Department of EEE,Telangana,India

4. Saveetha School of Engineering,Department of ECE,Chennai,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10527409/10527410/10527637.pdf?arnumber=10527637

Reference13 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. Analysis of Small-Signal Parameters of 2-D Modfet with Polarization Effects for Microwave Applications

3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Impact of surface defects in electron beam evaporated ZnO thin films on FET biosensing characteristics towards reliable PSA detection

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