Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02083-x.pdf
Reference43 articles.
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2. Takagi S-I, Toriumi A (1995) Quantitative understanding of inversion-layer capacitance in Si MOSFET’s. IEEE Trans Electron Devices 42(12):2125–2130
3. Yigletu FM et al (2013) Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs. IEEE Trans Electron Devices 60(11):3746–3752
4. Mukherjee H, Kar M, Kundu A (2022) Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths. J Electron Mater 51(2):692–703
5. Khan AN, Jena KA, Routray S, Chatterjee G (2022) RF/analog and linearity performance evaluation of lattice-matched ultra-thin AlGaN/GaN gate recessed MOSHEMT with silicon substrate. Silicon. https://doi.org/10.1007/s12633-021-01605-3
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