Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device
Author:
Publisher
Pleiades Publishing Ltd
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1134/S1063739723700233.pdf
Reference23 articles.
1. Sheppard, S., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., and Jenkins, T.J., High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates, IEEE Electron Device Lett., 1999, vol. 20, no. 4, pp. 161–163. https://doi.org/10.1109/55.753753
2. Mishra, U.K., Wu, Yi-F., Keller, B.P., and Denbaars, S.P., GaN microwave electronics, IEEE Trans. Microwave Theory Tech., 1998, vol. 46, no. 6, pp. 756–761. https://doi.org/10.1109/22.681197
3. Santhakumar, R., Thibeault, B., Higashiwaki, M., Keller, S., Chen, Zh., Mishra, U.K., and York, R.A., Two-stage high-gain high-power distributed amplifier using dual-gate GaN HEMTs, IEEE Trans. Microwave Theory Tech., 2011, vol. 59, no. 8, pp. 2059–2063. https://doi.org/10.1109/TMTT.2011.2144996
4. Touati, Z-e., Hamaizia, Z., and Messai, Z., DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT, 4th Int. Conf. on Electrical Engineering (ICEE), Boumerdes, Algeria, 2015, IEEE, 2015, pp. 1–4. https://doi.org/10.1109/INTEE.2015.7416850
5. Dong, Zh., Wang, J., Wen, C.P., Gong, D., Li, Yi., Yu, M., Hao, Yi., Xu, F., Shen, B., and Wang, Ya., High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator, Solid-State Electron., 2010, vol. 54, no. 11, pp. 1339–1342. https://doi.org/10.1016/j.sse.2010.06.001
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3