DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT-Reference-Cited by-同舟云学术

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DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 4th International Conference on Electrical Engineering (ICEE)
language:
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Author:

Touati Zine-eddine,Hamaizia Zahra,Messai Zitouni

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7405754/7416597/07416850.pdf?arnumber=7416850

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications;East European Journal of Physics;2023-12-02

2. Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device;Russian Microelectronics;2023-04

3. Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications;Journal of Computational Electronics;2023-02-28

4. Design of a 5MHz 4A Half Bridge Gate Driver in 180nm BCD Process for GaN HEMT;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

5. A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs;IEICE Electronics Express;2022-08-25

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