RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01605-3.pdf
Reference39 articles.
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2. Basu S, Singh PK, Sze P-W, Wang Y-H (2010) AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al2O3 as gate dielectric. J Electrochem Soc 157(10):H947
3. Hasan MR, Motayed A, Fahad MS, Rao MV (2017) Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT. J Vac Sci Technol B 35(5):052202
4. Lee C-T, Chang J-H, Tseng C-Y (2016) Monolithic enhancement-mode and depletion-mode GaN-based MOSHEMTs. In: Gallium Nitride Materials and Devices XI, vol 9748. International Society for Optics and Photonics, p 97480Z
5. Taube A, Sochacki M, Szmidt J, Kamińska E, Piotrowska A (2014) Modelling and simulation of normally-off AlGaN/GaN MOS-HEMTs. Int J Electron Telecommun 60(3):253–258
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