Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing-Reference-Cited by-同舟云学术

Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing

Published:2023-05 Issue: Volume:49 Page:83-90
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Mishra Girish Shankar^ORCID,Mohankumar N.,Singh Sankalp Kumar

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference43 articles.

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3. Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing;Engineering Research Express;2024-04-22

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