Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1577222
Reference28 articles.
1. Kilovolt AlGaN/GaN HEMTs as Switching Devices
2. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
5. Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
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