Contact Material and Interface State Effects on AlGaN/GaN HEMT Characteristic and Performance
Author:
Affiliation:
1. SRM Institute of Science and Technology,Dept. of Electronics and Communication Engineering,Chennai,India
Funder
SRM Institute of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10547720/10547724/10547848.pdf?arnumber=10547848
Reference19 articles.
1. Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
2. GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
3. Very-high power density AlGaN/GaN HEMTs
4. Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
5. RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate
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