Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9172152/09159895.pdf?arnumber=9159895
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of high-k dielectric HfO2 on performance of AlGaN/GaN based MOSHEMT for RF applications;Microsystem Technologies;2023-12-18
2. Design and Investigation of a Charge Plasma-based dopingless Cylindrical NW SCFET for sub-10 nm;2023 International Semiconductor Conference (CAS);2023-10-11
3. Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device;Russian Microelectronics;2023-04
4. Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications;Lecture Notes in Electrical Engineering;2022-09-12
5. Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure;Silicon;2022-09-05
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