Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications-Reference-Cited by-同舟云学术

Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Published:2022-09-12 Issue: Volume: Page:175-186
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
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Author:

Dastidar Ananya^ORCID,Patra Tapas Kumar^ORCID

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-19-2308-1_19

Reference39 articles.

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2. Takakura K, Putcha V, Simoen E, Alian AR, Peralagu U, Waldron N, Parvais B, Collaert N (2020) Low-frequency noise investigation of GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect transistor with different gate length and orientation. IEEE Trans Electron Devices 67:3062–3068. https://doi.org/10.1109/TED.2020.3002732

3. Kume E, Ishii H, Hattori H, Chang WH, Ogura M, Kanaya H, Asano T, Maeda T (2017) InAs MOS-HEMT power detector for 1.0 THz on quartz glass. In: 2017 IEEE Electron Devices Technol Manuf Conf EDTM 2017—Proc, 196–197. https://doi.org/10.1109/EDTM.2017.7947562

4. Leuther A, Merkle T, Weber R, Sommer R, Tessmann A (2019) THz frequency HEMTs: Future trends and applications. In: 2019 Compd Semicond Week, CSW 2019—Proc, 1–2. https://doi.org/10.1109/ICIPRM.2019.8819000

5. Varghese A, Periasamy C, Bhargava L (2019) Fabrication and charge deduction based sensitivity analysis of gan mos-hemt device for glucose, mig, c-erbb-2, kim-1, and psa detection. IEEE Trans Nanotechnol 18:747–755. https://doi.org/10.1109/TNANO.2019.2928308

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1. Sensitivity estimation of biosensor in a tapered cavity MOSHEMT;Physica Scripta;2024-04-08