Performance analysis of graphene field effect transistor at nanoscale regime-Reference-Cited by-同舟云学术

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Performance analysis of graphene field effect transistor at nanoscale regime

Published:2024-09 Issue: Volume:9 Page:100679
ISSN:2772-6711
Container-title:e-Prime - Advances in Electrical Engineering, Electronics and Energy
language:en
Short-container-title:e-Prime - Advances in Electrical Engineering, Electronics and Energy

Author:

Fuad Mahamudul Hassan^ORCID,Nayan Md Faysal^ORCID,Raihan Md. Arif^ORCID,Yeassin Rahbaar^ORCID,Mahmud Russel Reza^ORCID

Publisher

Elsevier BV

Reference29 articles.

1. Batch to continuous photocatalytic degradation of phenol using nitrogen-rich g-C3N4 nanocomposites;Al-Nayili;Res. Chem. Intermed.,2023

2. Focus on graphene;Peres;New J. Phys.,2009

3. Mobility in graphene double gate field effect transistors;Lemme;Solid State Electron.,2008

4. Ultrahigh electron mobility in suspended graphene;Bolotin;Solid State Commun.,2008

5. Review of Current Status of III-V MOSFETs;Thayne;ECS Trans.,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Z-shaped gate tunnel FET with graphene channel: An extensive investigation of its analog and linearity performance;Microelectronics Journal;2024-11

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